ASML has just officially shipped its very first High-NA EUV lithography scanner to Intel, with the sparkling new Twinscan EXE:5000 extreme ultraviolet (EUV) scanner being the first High-NA scanner ...

Imagine a machine so advanced it operates with light invisible to the human eye, etching circuits onto silicon wafers at scales smaller than a virus. This is the world of EUV lithography, a ...

ASML has delivered a first-generation Twinscan EXE:5000 High-NA extreme ultraviolet (EUV) lithography scanner to Intel, seven years after Intel first ordered the machine. The High numerical aperture ...

Steven Scheer: "The opening of the joint ASML-imec High NA EUV Lithography Lab in Veldhoven, the Netherlands, marked a milestone in preparing High NA EUV for adoption in mass manufacturing [1].

How Does EUV Lithography Work? EUV Lithography is a state-of-the-art technology in chip manufacturing that uses highly energetic ultraviolet light to carve detailed patterns onto semiconductor ...

The semiconductor equipment giant ASML and electronics research center imec have opened a joint laboratory dedicated to high-numerical aperture (high-NA) extreme ultraviolet (EUV) lithography, seen by ...

Figure 1. Comparison between conventional imaging using an imaging system (left) and “diffractive imaging” (right). In both cases, the sample needs to be illuminated by EUV light. However, the ...

The rapidly increasing demand for advanced-node chips to support everything-AI is putting pressure on the industry’s ability to meet demand. The need for cutting-edge semiconductors is accelerating in ...

Intel announced that it had installed ASML's Twinscan EXE:5200B, the industry's first High-NA lithography tool with 0.55 numerical aperture projection optics made for commercial chip production. The ...

As semiconductor devices become more complex, so do the methods for patterning them. Ever-smaller features at each new node require continuous advancements in photolithography techniques and ...

Research and innovation hub imec has produced patterned structures obtained after exposure with the 0.55NA EUV scanner in the joint ASML-imec High NA EUV Lithography Lab in Veldhoven, the Netherlands.