The demand for consistently high electrical performance in the power discrete semiconductor market has driven component developers to continuously enhance semiconductor assembly packaging technology ...
Advances in laser grooving means that manufacturers are able to optimize die separation quality by combining traditional blade dicing and laser grooving techniques to separate individual chips from ...
Chicago, Dec. 11, 2025 (GLOBE NEWSWIRE) -- The global wafer dicing services market was valued at US$ 617.5 million in 2025 and is projected to exceed valuation of US$ 932.9 million by 2035 at a CAGR ...
The complete wafer saw solution includes: DISCO’s fully automatic dicing saw for high-throughput, dual-cut processing, DISCO’s ablation laser saw and stealth dicing saw, Rudolph’s NSX ® inspection ...
Cleaving is a fast and simple method used for preparing samples of semiconductor materials, including silicon. In contrast, sapphire does not cleave well, despite being a single crystal. While sawing ...
New Delhi, May 20, 2024 (GLOBE NEWSWIRE) -- The global wafer dicing services market stood at US$ 578.8 million in 2023. It is expected to reach US$ 838.9 million by 2032, growing at a moderate CAGR of ...
By wafer size, the 5-inch and 6-inch segment accounted for nearly two-thirds of the global thin wafer processing and dicing equipment market share in 2021, and is projected to retain its dominance by ...
The wafer dicing process, a critical stage in semiconductor production, involves the precise cutting of silicon wafers into individual die components, which are essential in a wide range of electronic ...
TOKYO--(BUSINESS WIRE)--Furukawa Electric Co., Ltd. (TOKYO:5801) has begun mass producing expand separation dicing tape, a type of tape for use with semiconductors. Expand separation dicing tape ...
(MENAFN- EIN Presswire) Rest of Asia-Pacific segment contributed the major share in the thin wafer processing and dicing equipment market in 2021. The thin wafer processing and dicing equipment market ...
Imec has developed a Cu-to-Cu and SiCN-to-SiCN die-to-wafer bonding process resulting in a Cu bond pad pitch of only 2µm at <350nm die-to-wafer overlay error, achieving good electrical yield. Such ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback