In the era of big data and machine learning technology, performing low-power in-memory computing operations is becoming an increasingly important requisite. While much advance has been achieved in ...

A novel switching mechanism based on hydrogen ion migration replaces conventional oxygen-vacancy-based approaches, improving device stability and uniformity. The technology was implemented in a ...

Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...

This study addresses key open questions in ferroelectric tunnel junction research, including how device scaling influences conduction mechanisms and memory performance. Shrinking ferroelectric tunnel ...

A team of researchers has proposed a new concept for magnet-based memory devices, which might revolutionize information storage devices owing to their potential for large-scale integration, ...

This voice experience is generated by AI. Learn more. This voice experience is generated by AI. Learn more. This is my fourth and last blog on digital storage and memory projections for 2026 The first ...

SAN JOSE, Calif.--(BUSINESS WIRE)--KIOXIA America, Inc. today announced sampling 1 of the industry’s first 2 Universal Flash Storage 3 (UFS) Ver. 4.0 embedded flash memory devices 3 designed for ...

SAN JOSE, Calif.--(BUSINESS WIRE)--KIOXIA America, Inc. today announced that it has begun sampling 1 new Universal Flash Storage 2 (UFS) Ver. 4.1 embedded memory devices designed for automotive ...

TL;DR: South Korean memory rivals SK hynix and Samsung team up to expedite LPDDR6-PIM (Processing-In-Memory) technology for the future of on-device AI. SK hynix and Samsung are massive memory rivals ...