Overcoming the known power and size limitations in LiDAR design is critical to enabling scalable, cost-effective adoption ...

Abstract: In this work, an analytical model for fringe gate capacitance in complementary FET (CFET) is proposed. Three kinds of CFET based on the fin, gate-all-around (GAA) nanowire, and nanosheet are ...

In the AI hardware boom, chips get the headlines. But inside every AI server, a quieter part is now driving supply risk and ...

Samsung Electro-Mechanics will operate its key production lines at full capacity in the second half of this year as demand ...