Abstract: In this work, an analytical model for fringe gate capacitance in complementary FET (CFET) is proposed. Three kinds of CFET based on the fin, gate-all-around (GAA) nanowire, and nanosheet are ...
Here's a phrase to describe someone who overreacts easily ...
一些您可能无法访问的结果已被隐去。
显示无法访问的结果