Forbes contributors publish independent expert analyses and insights. Covering Digital Storage Technology & Market. IEEE President in 2024 This last week I had my last two public appearances as the ...

With the right mix of materials, TFETs promise cooler, smaller, and more efficient circuits for everything from the Internet of Things to brain-inspired computers. But before they can leave the lab, ...

Recently in material science news from China we hear that [Hailin Peng] and his team at Peking University just made the world’s fastest transistor and it’s not made of silicon. Before we tell you ...

Abstract: This study introduces a cross field-effect transistor (CrossFET) design, which features two orthogonally crossed transistors: an n-channel field-effect transistor (NFET) and a p-channel ...

Advances in materials and architecture could lead to silicon-free chip manufacturing thanks to a new type of transistor. When you purchase through links on our site, we may earn an affiliate ...

Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1, Komaba, Meguro-ku 153-8904, Tokyo, Japan Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, ...

State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China University of Chinese Academy of ...

Herein, wafer-scale 8-nm films of Sn-doped gallium oxide (Ga 2 O 3) were fabricated via physical vapor deposition at room temperature. Using these films, 8-nm Sn-doped Ga 2 O 3 field-effect ...

A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...