LAWRENCEVILLE, Ga.--(BUSINESS WIRE)--Silicon Creations, a leading provider of precision IP for advanced SoC design, today announced its 1000th production FinFET tapeout at TSMC, alongside the ...

As CMOS technology approaches sub-1 nm nodes, conventional Dennard scaling has essentially ended, and further device scaling must rely on innovations across multiple domains: Patterning, Channel ...

Community driven content discussing all aspects of software development from DevOps to design patterns. Git isn’t hard to learn. Moreover, with a Git GUI such as Atlassian’s Sourcetree, and a SaaS ...

在90纳米制程之前，每一代集成电路技术节点的缩放不仅带来了更高的器件密度，还提升了器件性能。然而，当CMOS IC从90纳米发展到65纳米节点时，缩放并未改善器件性能：它只增加了器件密度。这一变化的主要原因是栅氧化层的厚度无法再继续减薄，因为隧道 ...

If you’re completely new to Microsoft Word, you’re probably wondering where to begin. You’ve come to the right place because we’ll get you started. From what you see in the Word window to how to save ...

In this paper an advanced 12 nm bulk FinFET technology is characterized and modelled at cryogenic temperatures down to ~10 K to predict the behaviour of quantum control circuits. Carrier mobility, ...

Whether you are a technology enthusiast or a professional looking to enhance your scripting skills, we have designed this Windows PowerShell scripting tutorial for beginners, especially for you. So, ...

How does a nanosheet transistor compare with a FinFET? Issues involved in developing and manufacturing nanosheet transistors. Benefits of adopting nanosheet transistors in chip design. It’s the end of ...