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Charging technology has improved significantly in recent years. Devices like phones, tablets, and laptops now power up much faster than they used to. Still, most traditional chargers come with a few ...

Abstract: This work introduces a novel accelerated lifetime testing (ALT) methodology for Lateral GaN-on-Si high electron mobility transistors (HEMTs) called “Three Factor Acceleration Testing.” By ...

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...

A novel application from Innoscience for a BMS uses a GaN HEMT that is designed and configured as a bidirectional device. Bidirectional switches (BDSes) have many different applications. One example ...

Sept 11 (Reuters) - German semiconductor maker Infineon (IFXGn.DE), opens new tab said on Wednesday that it would take a large slice of the growing market for gallium nitride (GaN) chips, after ...

Anker proves that with a clever design, you can also achieve compact dimensions suitable for traveling. Users will be pleased to know that this does not compromise performance. The Anker Prime 100W ...

Vitesco leverages GaN power FETs to bring passive cooling to its DC-DC converters, eliminating the need for costly liquid cooling. As silicon reaches its physical limits, gallium nitride (GaN) is ...

Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven ...

GaN technology is playing a crucial role in helping industries innovate and grow, including defense. Learn how the defense industry is using gallium nitride today, as well as some potential future ...