TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...

Microchip Technology Inc. has announced a portfolio of IGBT 7 devices housed in different packages, offering multiple topologies and current and voltage ranges. Featuring increased power capability, ...

Abstract: The die-attach layer is a vulnerable structure that is important to the reliability of an insulated-gate bipolar transistor (IGBT) module. A new failure mechanism named fatigue crack network ...

Join Teledyne LeCroy to learn more about how to test and qualify gallium nitride (GaN) metal–oxide–semiconductor field-effect transistors (MOSFETs), silicon carbide (SiC) MOSFETs and SiC insulated ...

Today, onsemi announced the availability of its 1,200 V SPM31 intelligent power modules (IPMs) featuring the latest generation Field Stop 7 (FS7) insulated gate bipolar transistor (IGBT) technology.

Abstract: Temperature Shock Test (TST) is a basic test for Insulated Gate Bipolar Transistor (IGBT) modules, which can effectively reveal the problems existing in device packaging. In engineering, the ...

New IXIDM1401 driver module combines supreme compactness with the highest performance and reliability. IXYS’ objective is to serve the market with IGBT driver parts that enable a short design circle ...