NAND 的最小存储结构，通过存储电荷表示不同电压窗，从而存储 1bit 或多 bit 信息。 传统工艺，将存储单元做在同一平面上，已基本被 3D 取代。 层数越高 → 密度更大、成本更低，但工艺复杂度增加。 主流 3D NAND 采用的结构，用氮化硅储存电荷。对比浮栅 ...

Forward-looking: Building NAND with ferroelectric transistors can dramatically cut power consumption by sidestepping a core limitation of conventional NAND, according to a new study from the Samsung ...

TL;DR: Samsung has developed next-generation NAND flash storage that reduces power consumption by up to 96% compared to current technology. This breakthrough, based on ferroelectric transistors and ...

Vertical scaling is vital to increasing the storage density of 3D NAND. According to imec, airgap integration and charge trap layer separation are the keys to unlocking it. Inside the charge trap cell ...

Abstract: “NAND flash technology has come to dominate the nonvolatile memory market due to its low cost and high capacity. In the early days, it was used in media storage devices, an application in ...

Most smartphones and computers today boast extremely fast read and write speeds, thanks to a paradigm shift towards flash memory, especially in consumer PCs. NAND flash memory finds use in a variety ...

Kristy Ambrose has been writing professionally since 2010. She dabbles in various genres, but her favorites are fantasy and science fiction. She creates everything from fanfiction to serialized novels ...

What just happened? Intel and SK hynix have finalized an $8.85 billion deal that transfers Intel's NAND flash memory business to the South Korean semiconductor giant, marking the completion of a multi ...

Check out more coverage of the 2022 Flash Memory Summit. Micron has started mass production of its most advanced triple-level-cell (TLC) 3D NAND chips made up of 232 layers of memory cells, pulling ...